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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 0.3A SOT23-6
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：51pF @ 25V
- Power - Max：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The PJS6839 is a dual P-channel enhancement mode MOSFET in an SOT-23 6L package. It features a drain-source voltage of -60V and continuous drain current of -300mA. On-resistance values are less than 4Ω at VGS=-10V, less than 6Ω at VGS=-4.5V, and less than 13Ω at VGS=-2.5V. The device utilizes advanced trench process technology for low power dissipation of 500mW at 25°C. It operates within a junction temperature range of -55°C to 150°C and complies with EU RoHS 2.0 standards.
Feature Summary
- Advanced Trench Process Technology
- Specially Designed for Relay Driver Applications
- Lead Free in Compliance with EU RoHS 2.0
- Green Molding Compound as per IEC 61249 Standard
Applications
- Relay driver circuits
- Speed line drive applications
Procurement Notes
Verify the specific ordering suffix against official Panjit documentation to confirm packaging details. The datasheet indicates that version PJS6839_S1_00001 corresponds to the SOT-23 6L package type with a packing quantity of 3K pcs on a 7-inch reel. Ensure compliance requirements match project specifications before finalizing procurement orders.
Selection Notes
Select this component for low-voltage P-channel switching applications requiring compact SOT-23 6L packaging. Evaluate gate threshold voltage characteristics against control logic levels to ensure adequate RDS(ON) performance. Consider thermal resistance limits when designing PCB layouts for heat dissipation in space-constrained environments.
Part Context
This part belongs to Panjit International Inc.'s lineup of dual P-channel enhancement mode MOSFETs. It is designed to provide efficient switching capabilities in small form factors. The device integrates two independent channels within a single package to save board space while maintaining reliable electrical performance for standard consumer and industrial electronics.
Replacement Considerations
Consult official Panjit documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.
FAQ
What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) is rated at -1000 mA.
How does the on-resistance vary with gate-source voltage?
RDS(ON) decreases as the magnitude of VGS increases, measuring less than 4Ω at -10V, less than 6Ω at -4.5V, and less than 13Ω at -2.5V.
Is the device suitable for high-reliability medical applications?
No, Panjit explicitly states these products are not designed or authorized for equipment requiring high reliability or relating to human life, such as medical instruments.
