PJT138K_R1_00001

$0.14

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-

SKU:6acc75363edc Category: FET, MOSFET Arrays Brand: Panjit International Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 50V 0.36A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：50V
Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 25V
Power - Max：236mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

Download product information

PJT138K_R1_00001

Overview

The PJT138K_R1_00001 is a single N-channel enhancement mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features integrated ESD protection rated at 2 kV HBM. The device operates with a drain-source voltage of 50 V and supports a continuous drain current of 360 mA. Key electrical parameters include a maximum on-resistance of 1.6 Ω at VGS=10V, a gate threshold voltage of 1.5 V max, and a total gate charge of 1 nC. It is housed in an SOT-363 package with a power dissipation rating of 236 mW at 25°C ambient temperature.

Feature Summary

Advanced Trench Process Technology for low on-resistance performance
Integrated ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM
Lead-free construction compliant with EU RoHS directives
Halogen-free green molding compound per IEC61249 standard

Applications

Battery operated systems
Solid-state relay drivers
Relay driver circuits
Display drivers
Memory circuit interfaces

Procurement Notes

Verify the specific ordering suffix to confirm packaging configuration, as the base part number PJT138K is available in both 3,000-piece and 10,000-piece reel options. Ensure the component marking matches the datasheet specification '8KD' for the SOT-363 package. Confirm compliance requirements against the latest manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for low-voltage switching applications requiring robust ESD tolerance. The device offers optimized on-resistance across multiple gate drive voltages, including 10 V, 4.5 V, and 2.5 V. Consider the thermal resistance of 530 °C/W when designing for high ambient temperatures or limited copper pad areas. Verify that the required load current remains within the 360 mA continuous limit.

Part Context

This component belongs to the PJT138K series of N-channel enhancement mode MOSFETs produced by Panjit International Inc. The series is engineered for battery-powered devices and solid-state relay applications. The PJT138K variant specifically integrates ESD protection and utilizes trench technology to achieve low on-resistance characteristics within a compact SOT-363 surface-mount package.