PJT138L_R1_00001

$0.43

Description：MOSFET 2N-CH 60V 0.2A SOT363
Series：-

SKU:e3f6f9e9fda4 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.2A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Rds On (Max) @ Id, Vgs：4.2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：15pF @ 15V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT138L_R1_00001

Overview

The PJT138L_R1_00001 is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features advanced trench process technology and ESD protection. Key electrical parameters include a drain-source breakdown voltage of 60V, continuous drain current of 200mA, and pulsed drain current of 1000mA. The on-state resistance (RDS(on)) is less than 4.2Ω at VGS=10V/ID=200mA, less than 5Ω at VGS=4.5V/ID=100mA, and less than 7Ω at VGS=2.5V/ID=50mA. Power dissipation is 350mW at 25°C ambient temperature with a thermal resistance of 357°C/W.

Feature Summary

Advanced Trench Process Technology for optimized performance
ESD Protected design for enhanced reliability
Lead-free construction compliant with EU RoHS directive
Halogen-free green molding compound per IEC61249 standard

Applications

Relay driver circuits
Speed line drive applications

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging details such as reel size or tape-and-reel specifications. Ensure compliance with environmental directives like RoHS and halogen-free requirements during procurement. Confirm that the component meets the required operating temperature range and thermal characteristics for the intended application environment.

Selection Notes

Select this component for low-voltage switching applications requiring small form factor integration. Consider the RDS(on) values at various gate voltages when designing drive circuits to ensure efficient power handling. Verify that the SOT-363 package dimensions and thermal resistance align with the PCB layout and heat dissipation capabilities of the target system.

Part Context

This part belongs to the PJT138L series of N-Channel Enhancement Mode MOSFETs from Panjit International Inc. The series utilizes advanced trench process technology to achieve low on-resistance within a compact SOT-363 package. It is designed for general-purpose switching applications where space constraints and efficiency are critical factors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer cross-reference lists for potential alternatives.

FAQ

What is the maximum pulsed drain current for the PJT138L?

The maximum pulsed drain current (IDM) is 1000 mA.

Is the PJT138L suitable for high-reliability medical or aerospace applications?

No, the datasheet explicitly states that these products are not designed or authorized for equipment requiring high levels of reliability, including medical instruments or aerospace machinery.