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The PJT7600_R1_00001 is a complementary enhancement mode MOSFET array manufactured by Panjit International Inc. in an SOT-363 package. It integrates one N-channel and one P-channel transistor within a single surface-mount device. The N-channel component supports a drain-source voltage of 20V and a continuous drain current of 1A, while the P-channel counterpart handles -20V and -0.7A. Maximum power dissipation is rated at 350mW at 25°C ambient temperature. The device incorporates advanced trench process technology and provides electrostatic discharge protection rated at 2kV under the human body model.
Verify the specific ordering suffix to confirm the reel size and packaging quantity. The R1 designation corresponds to a 3000-piece quantity on a 7-inch reel. Confirm that the marking code T60 matches the physical components received. Ensure compliance requirements align with project specifications regarding halogen-free materials and lead-free solderability standards.
Select this component when space-constrained designs require both N-channel and P-channel switching capabilities in a single package. Verify that the 20V breakdown voltage meets the circuit's maximum operating conditions. Check that the thermal resistance characteristics are sufficient for the expected power dissipation levels in the target application environment.
This part belongs to the PPJT7600 series of low-voltage complementary MOSFETs produced by Panjit International Inc. The manufacturer utilizes an advanced trench process to achieve the specified electrical characteristics within the small SOT-363 case outline. The product line focuses on providing integrated solutions for portable electronics and low-power switching applications.
Direct replacements must match the SOT-363 package and provide equivalent 20V/20V voltage ratings. Verify that alternative parts offer comparable gate threshold voltages and on-state resistance values to ensure circuit compatibility without redesigning the drive logic.