PJT7601_R1_00001

PJT7601_R1_00001

$0.58
  • Description:MOSFET N/P-CH 20V 0.5A SOT363
  • Series:-

SKU:8930514a7942 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 0.5A SOT363
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel Complementary
  • FET Feature:Logic Level Gate, 1.2V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
  • Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:67pF @ 10V, 38pF @ 10V
  • Power - Max:350mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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PJT7601_R1_00001

Overview

The PJT7601_R1_00001 is a complementary enhancement mode MOSFET array manufactured by Panjit International Inc. It integrates one N-channel and one P-channel transistor within a surface-mount SOT-363 package. The device features a drain-source breakdown voltage of 20V for both channels. Continuous drain current ratings are specified at 500mA for the N-channel and 350mA for the P-channel under ambient temperature conditions. Maximum power dissipation is rated at 350mW. The component supports logic level gate drive with a 1.2V drive capability and includes integrated ESD protection.

Feature Summary

  • Complementary N/P-channel configuration in a single compact package
  • Integrated electrostatic discharge (ESD) protection
  • Logic level gate operation compatible with low voltage drive signals

Applications

  • Low voltage DC-DC converter circuits
  • Battery-powered portable electronic devices
  • Signal switching applications requiring small form factor

Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches project requirements. Confirm that the SOT-363 footprint aligns with the PCB layout design. Check manufacturer documentation for updated thermal derating curves to ensure reliable operation within the specified -55°C to 150°C junction temperature range during final assembly validation.

Selection Notes

Select this component when space-constrained designs require paired N and P-channel switching capabilities. The 20V rating suits low-voltage systems such as USB-powered or battery-operated equipment. Consider the 350mW power dissipation limit for thermal management planning. The logic level gate feature simplifies interface with microcontrollers operating at standard digital logic voltages without additional level shifting components.

Part Context

This part belongs to Panjit's complementary MOSFET array series designed for high-density surface mount applications. It serves as an alternative to discrete dual-transistor solutions, reducing board space and assembly complexity. The SOT-363 package provides a standardized footprint compatible with automated pick-and-place manufacturing processes commonly used in consumer electronics production lines.

Replacement Considerations

PJT7600_R1_00001: Offers similar 20V complementary functionality in SOT-363 but with different current ratings (1A/700mA). Verify if the higher current capacity meets system requirements or if the original lower rating is sufficient for thermal constraints.

PJT7601_R1_00001PJT7601_R1_00001
$0.58
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