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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.7A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：700mA (Ta)
- Rds On (Max) @ Id, Vgs：325mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：165pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The PJT7801_R1_00001 is a P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It features an SOT-363 package and provides ESD protection rated at 2kV HBM. The device supports a Drain-Source Voltage (VDS) of -20 V and a Continuous Drain Current (ID) of -0.7 A. Key electrical parameters include a maximum RDS(on) of 325 mΩ at VGS=-4.5V, ID=-0.7A, and 600 mΩ at VGS=-1.8V, ID=-0.5A. Total Gate Charge (Qg) is typically 2.2 nC. Power Dissipation is 350 mW at Ta=25°C with a thermal resistance (RθJA) of 357 °C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Advanced Trench Process Technology for optimized switching performance
- Integrated ESD protection rated at 2kV Human Body Model
- Halogen-free green molding compound compliant with IEC61249 standards
Applications
- Switch load applications
- PWM control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and type. The _R1 suffix corresponds to a 3K pcs / 7” reel configuration, while _R2 indicates a 10K pcs / 13” reel. Confirm RoHS compliance and halogen-free status requirements prior to procurement to ensure alignment with project specifications.
Selection Notes
Select this component for low-voltage P-Channel switching designs requiring compact SOT-363 footprint. Evaluate RDS(on) limits at specific gate drive voltages (-1.8V, -2.5V, -4.5V) to ensure adequate current handling. Consider the 357 °C/W thermal resistance for heat dissipation in ambient conditions above 25°C.
Part Context
This part belongs to the PPJT7801 series of 20V P-Channel Enhancement Mode MOSFETs. It is designed as a general-purpose discrete semiconductor device suitable for standard commercial electronics. The product line emphasizes cost-effective trench technology solutions for power management and signal switching tasks.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching VDS, ID, RDS(on), and package dimensions independently.
