PJT7802-AU_R1_000A1

$0.12

Description：MOSFET 2N-CH 20V 0.5A SOT363
Series：-

SKU:70a6f4ed81e6 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.5A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：39pF @ 10V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：Automotive
Qualification：AEC-Q101

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PJT7802-AU_R1_000A1

Overview

The PJT7802-AU_R1_000A1 is a 20V N-Channel Enhancement Mode MOSFET in an SOT-363 package. It features a maximum continuous drain current of 0.5A and power dissipation of 350mW at 25°C. The device utilizes advanced trench process technology for low on-resistance, specified as less than 0.4Ω at VGS=4.5V and ID=0.5A. It includes ESD protection and meets AEC-Q101 automotive qualification standards.

Feature Summary

Advanced Trench Process Technology
ESD Protected
AEC-Q101 Qualified

Applications

Switch Load
PWM Application

Procurement Notes

Verify the specific ordering suffix to confirm the reel size and packing quantity. The R1 suffix indicates a 3K pcs / 7” reel configuration, while other suffixes may denote different packaging quantities such as 10K pcs / 13” reels. Ensure the marking code matches the required version for your assembly process.

Selection Notes

Select this component for low-voltage switching applications requiring compact surface-mount solutions. Consider the 0.5A continuous current limit and 350mW thermal dissipation constraints when designing the circuit. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-state resistance performance.

Part Context

This part belongs to the Panjit PJT78 series of 20V N-Channel Enhancement Mode MOSFETs. It shares the same electrical specifications and package type as the PJT7802-AU_R2_000A1 variant, differing only in the standard packing quantity and reel dimensions provided by the manufacturer.