ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.5A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：39pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
Download product information
Overview
The PJT7802 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It features ESD protection and complies with EU RoHS 2011/65/EU directives. The device supports a continuous drain current of 0.5A and a pulsed drain current of 2.0A, with a maximum power dissipation of 350mW at 25°C. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 20V and a gate threshold voltage (VGS(th)) ranging from 0.4V to 1.0V. On-state resistance (RDS(on)) varies based on gate drive conditions: less than 0.4Ω at VGS=4.5V/ID=0.5A, less than 0.7Ω at VGS=2.5V/ID=0.3A, and typically 1.2Ω at VGS=1.8V/ID=0.1A. Total gate charge is typically 0.9nC.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Specially designed for switch load and PWM applications
- Integrated ESD protection capabilities
- Halogen-free green molding compound compliant with IEC61249
Applications
- Switch load management circuits
- Pulse Width Modulation (PWM) control applications
- Low-voltage power switching systems
Procurement Notes
Verify the specific ordering suffix R1_00001 against official Panjit documentation to confirm packaging quantity and reel specifications. Ensure compliance requirements match project needs, specifically checking for RoHS 2011/65/EU and IEC61249 halogen-free standards. Confirm that the SOT-363 package marking 'T02' aligns with assembly identification protocols before finalizing procurement orders.
Selection Notes
Select this component when a low-voltage, small-footprint N-channel MOSFET is required for high-efficiency switching. Evaluate RDS(on) requirements against available gate drive voltages; use the 4.5V specification for standard logic levels or the 1.8V data for low-power operation. Consider the 357°C/W thermal resistance for heat dissipation calculations in free-air environments without significant copper pad area.
Part Context
This part belongs to the Panjit International Inc. discrete semiconductor portfolio, specifically within their enhancement mode MOSFET line. The SOT-363 package provides a compact surface-mount solution suitable for space-constrained designs. The device utilizes advanced trench technology to achieve low on-resistance while maintaining robust switching characteristics for general-purpose electronic applications.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided datasheet. Verify pinout compatibility and electrical ratings if considering alternative manufacturers for the SOT-363 N-Channel MOSFET category.
