PJT7839_R1_00001

$0.24

Description：MOSFET 2P-CH 60V 0.25A SOT363
Series：-

SKU:3f065ee787bd Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 60V 0.25A SOT363
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
Rds On (Max) @ Id, Vgs：4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：51pF @ 25V
Power - Max：350mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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PJT7839_R1_00001

Overview

The PJT7839 is a 60V P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-363 package. It utilizes advanced trench process technology to achieve low on-resistance, with maximum values of 4Ω at VGS=-10V and ID=-500mA, 6Ω at VGS=-4.5V and ID=-200mA, and 13Ω at VGS=-2.5V and ID=-50mA. The device supports a continuous drain current of -250mA and a pulsed drain current of -1000mA. Key electrical parameters include a gate-source breakdown voltage of +20V, a typical gate threshold voltage of -1.5V, and a total gate charge of 1.1nC. Thermal characteristics specify a power dissipation of 350mW at 25°C ambient temperature.

Feature Summary

Advanced Trench Process Technology for optimized performance
ESD protection capabilities integrated into the design
Lead-free construction compliant with EU RoHS directives
Halogen-free green molding compound per IEC61249 standards

Applications

Relay driver circuits
Speed line drive applications

Procurement Notes

Verify component authenticity by checking the marking code 'T39' on the SOT-363 package against official Panjit documentation. Confirm compliance with environmental directives such as EU RoHS 2011/65/EU and IEC61249 halogen-free requirements during sourcing. Ensure the supplier provides valid lot numbers for tracking purposes, as Panjit uses lot numbers as the primary basis for product identification and support inquiries.

Selection Notes

Select this component for low-power switching tasks requiring a compact SOT-363 footprint. Evaluate the on-resistance specifications at specific gate voltages to ensure compatibility with the driving logic levels. Consider the thermal resistance and power dissipation limits when designing for elevated ambient temperatures or continuous operation scenarios.

Part Context

This part belongs to the PJT7839 series of P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series focuses on small-signal switching applications where space efficiency and low cost are prioritized. The SOT-363 package allows for surface-mount assembly suitable for dense PCB layouts.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers.

FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGS) rating is +20V.

Is the PJT7839 suitable for high-reliability medical equipment?

No, the datasheet explicitly states that these products are not designed or authorized for equipment requiring high reliability, including medical instruments.