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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.25A SOT363
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：250mA (Ta)
- Rds On (Max) @ Id, Vgs：3Ohm @ 600mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.82nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：34pF @ 25V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The PJT7872B is a 60V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. utilizing advanced trench process technology. It operates within a junction temperature range of -55°C to +150°C and features a maximum continuous drain current of 250mA with a pulsed drain current capability of 1000mA. The device exhibits a typical on-state resistance of 1.3Ω at VGS=10V and 1.7Ω at VGS=4.5V. Key electrical parameters include a gate threshold voltage of 1.8V (typical), total gate charge of 0.82nC, and power dissipation of 350mW at 25°C ambient temperature.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Lead-free construction compliant with EU RoHS 2011/65/EU directive
- Green molding compound meeting IEC61249 standards (Halogen Free)
- Terminals solderable per MIL-STD-750, Method 2026
Applications
- Relay driver circuits
- Speed line drive applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size or tape configuration. Confirm compliance requirements including RoHS and halogen-free status directly with the manufacturer's latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component for low-voltage switching applications requiring an N-channel enhancement mode MOSFET in a compact SOT-363 package. Ensure the operating conditions remain within the specified 60V drain-source voltage and 250mA continuous current limits while accounting for thermal derating above 25°C ambient temperature.
Part Context
This part belongs to the Panjit International Inc. lineup of small-signal MOSFETs designed for general-purpose switching tasks. The PJT7872B utilizes a silicon-based trench structure to achieve efficient conduction characteristics within a surface-mount footprint suitable for automated assembly processes.
Replacement Considerations
Consult official substitution lists from Panjit International Inc. for verified equivalent parts. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics.
