PJX138L_R1_00001

PJX138L_R1_00001

$0.42
  • Description:MOSFET 2N-CH 60V 0.16A SOT563
  • Series:-

SKU:c14842858b69 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.16A SOT563
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:160mA (Ta)
  • Rds On (Max) @ Id, Vgs:4.2Ohm @ 160mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:15pF @ 15V
  • Power - Max:223mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

Download product information

PJX138L_R1_00001

Overview

The PJX138L_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-563 package. It features a Drain-Source Voltage (VDS) of 60 V and a Continuous Drain Current (ID) of 160 mA. The device utilizes Advanced Trench Process Technology to achieve low on-state resistance, with RDS(on) maximums of 4.2 Ω at VGS=10V/ID=160mA, 5 Ω at VGS=4.5V/ID=100mA, and 7 Ω at VGS=2.5V/ID=50mA. Key dynamic parameters include a total gate charge (Qg) of 0.7 nC, turn-on delay time of 7 ns, rise time of 22 ns, turn-off delay time of 21 ns, and fall time of 25 ns. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual N-Channel configuration within a compact SOT-563 surface-mount package
  • Advanced Trench Process Technology for optimized switching performance
  • Integrated ESD protection capabilities
  • Lead-free construction compliant with EU RoHS 2.0 directives

Applications

  • Relay driver circuits
  • Speed line drive applications

Procurement Notes

Verify the component authenticity by checking the marking code X8L on the physical unit against the datasheet specifications. Confirm the package type is SOT-563 and validate the manufacturer details match Panjit International Inc. Ensure the ordering suffix matches the requested packing quantity, such as 4K pcs or 10K pcs per reel, before finalizing procurement orders.

Selection Notes

Select this component for low-current switching tasks requiring a 60V rating and dual-channel integration. Evaluate the thermal resistance of 560 °C/W and power dissipation limits of 223 mW at 25°C ambient conditions to ensure adequate heat management. Verify that the required gate drive voltage aligns with the specified RDS(on) thresholds for optimal efficiency.

Part Context

This part belongs to the NFET-60TEMN series of N-Channel Enhancement Mode MOSFETs produced by Panjit. It serves as a specialized solution for battery-operated systems and solid-state relay drivers where space constraints necessitate the use of the SOT-563 footprint while maintaining reliable switching characteristics under standard operating temperatures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching the 60V VDS, 160mA ID, SOT-563 package, and dual N-Channel configuration with equivalent electrical parameters from other manufacturers.

FAQ

What is the marking code for the PJX138L?

The marking code for the PJX138L is X8L.

What is the typical thermal resistance (RθJA) for this component?

The typical thermal resistance from junction to ambient is 560 °C/W.

Is the PJX138L suitable for medical instruments or aerospace machinery?

No, the product is not designed or authorized for equipment requiring high levels of reliability, including medical instruments, transportation equipment, or aerospace machinery.

PJX138L_R1_00001PJX138L_R1_00001
$0.42
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