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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.8A SOT563
- Series：-
- Mfr：Panjit International Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：800mA (Ta)
- Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.92nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：50pF @ 10V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The PJX8806 is a 20V N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features integrated ESD protection. The device operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-563 package. Key electrical parameters include a drain-source breakdown voltage (BVDSS) of 20V, continuous drain current (ID) of 800mA, and pulsed drain current (IDM) of 3000mA. On-state resistance (RDS(on)) values are 0.4Ω at VGS=4.5V/IDS=500mA, 0.7Ω at VGS=2.5V/IDS=300mA, and 1.2Ω at VGS=1.8V/IDS=100mA. Gate threshold voltage (VGS(th)) ranges from 0.4V to 1.0V.
Feature Summary
- Advanced Trench Process Technology for optimized performance
- Integrated ESD Protection capabilities
- Designed specifically for load switch or PWM applications
Applications
- Load Switch circuits
- PWM (Pulse Width Modulation) applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details and marking codes. Confirm compliance with RoHS 2.0 standards and IEC 61249 green molding compound requirements during component qualification. Ensure thermal management aligns with the specified derating characteristics above 25°C ambient temperature.
Selection Notes
Select this component for low-voltage switching applications requiring built-in electrostatic discharge protection. Evaluate gate drive voltages against the provided RDS(on) curves at 4.5V, 2.5V, and 1.8V to ensure adequate conduction efficiency. Consider the SOT-563 package constraints and thermal resistance when designing the PCB layout for optimal heat dissipation.
Part Context
This part belongs to Panjit's lineup of 20V N-Channel Enhancement Mode MOSFETs. It shares the SOT-563 form factor and trench technology architecture common to this series, designed to provide reliable switching performance in compact electronic designs while maintaining compliance with environmental directives.
Replacement Considerations
Consult official datasheets for pin-compatible alternatives within the same voltage and current ratings. Verify that any substitute maintains equivalent RDS(on) specifications and ESD protection levels to ensure circuit integrity without modification.
