PJX8808_R1_00001

$0.46

Description：MOSFET 2N-CH 20V 0.5A SOT563
Series：-

SKU:62c5642cf271 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 0.5A SOT563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
Rds On (Max) @ Id, Vgs：400mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：67pF @ 10V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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PJX8808_R1_00001

Overview

The PJX8808_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. in an SOT-563 package. It features a Drain-Source Voltage (VDS) of 20 V and a Continuous Drain Current (ID) of 500 mA. The device utilizes advanced trench process technology to achieve low on-state resistance, with RDS(on) values ranging from 310 mΩ at VGS=4.5V to 710 mΩ at VGS=1.2V. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) of 0.64 V typical, total gate charge (Qg) of 1.4 nC, and power dissipation of 300 mW at 25°C ambient temperature.

Feature Summary

Advanced Trench Process Technology for optimized performance
Low Voltage Drive capability supporting 1.2V operation
Integrated ESD protection mechanisms
Designed specifically for switch load and PWM applications

Applications

Switch load circuits
Pulse Width Modulation (PWM) applications

Procurement Notes

Verify the component authenticity by checking the marking code X08 on the SOT-563 package against official datasheets. Confirm compliance with EU RoHS 2.0 standards and IEC 61249 green molding compound requirements during incoming inspection. Ensure storage conditions maintain moisture sensitivity level integrity prior to soldering.

Selection Notes

Select this component for low-voltage switching designs requiring 20V breakdown and 500mA continuous current handling. Consider the thermal resistance of 417 °C/W when designing heat dissipation strategies. Verify that the drive voltage meets the minimum threshold requirements for the desired on-state resistance performance levels.

Part Context

This part belongs to the Panjit MOSFET portfolio, specifically designed as a dual N-Channel enhancement mode device. It is housed in a compact SOT-563 surface-mount package suitable for space-constrained PCB layouts. The product line emphasizes energy efficiency through low on-resistance and fast switching characteristics.

Replacement Considerations

No publicly confirmed substitute part numbers are documented in the provided source material. Cross-referencing requires matching VDS, ID, RDS(on), and package type specifications independently.

FAQ

What is the maximum pulsed drain current for the PJX8808?

The maximum pulsed drain current (IDM) is 1000 mA.

How does the gate threshold voltage vary?

The gate threshold voltage (VGS(th)) has a minimum of 0.3 V, a typical value of 0.64 V, and a maximum of 0.9 V under test conditions of VDS=VGS and ID=250uA.