PJX8828_R1_00001

PJX8828_R1_00001

$0.36
  • Description:MOSFET 2N-CH 30V 0.3A SOT563
  • Series:-

SKU:a94157739306 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 0.3A SOT563
  • Series:-
  • Mfr:Panjit International Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.2Ohm @ 300mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:45pF @ 10V
  • Power - Max:300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

Download product information

PJX8828_R1_00001

Overview

The PJX8828 is a single N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features ESD protection within an SOT-563 package. The device supports a Drain-Source Voltage (VDS) of 30 V and a continuous Drain Current (ID) of 300 mA. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) ranging from 0.4 V to 1.0 V, and a maximum Drain-Source On-State Resistance (RDS(on)) of 4.0 Ω at VGS=1.2V and ID=20mA. The total gate charge (Qg) is typically 0.9 nC. Thermal characteristics specify a power dissipation of 300 mW at 25°C ambient temperature with a junction-to-ambient thermal resistance of 417 °C/W.

Feature Summary

  • Advanced Trench Process Technology for optimized performance
  • Integrated ESD protection capabilities
  • Lead-free construction compliant with EU RoHS 2.0 directives
  • Green molding compound meeting IEC 61249 standard requirements

Applications

  • Relay driver circuits
  • Speed line drive applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel size and quantity per reel. Confirm that the component meets required environmental standards including RoHS compliance and halogen-free specifications before finalizing procurement orders.

Selection Notes

Select this component for low-current switching applications requiring a 30 V rating and compact SOT-563 footprint. Evaluate the RDS(on) values across different gate voltage levels to ensure compatibility with the driving logic levels available in the target circuit design.

Part Context

This part belongs to the general-purpose enhancement mode MOSFET category designed for small signal switching tasks. It is intended for use in consumer electronics and industrial control systems where space constraints necessitate the SOT-563 surface-mount package format.

Replacement Considerations

Cross-reference with other 30V N-Channel MOSFETs in the SOT-563 package. Ensure substitute parts match or exceed the 300 mA current rating and verify pinout compatibility for direct replacement.

FAQ

What is the maximum pulsed drain current for the PJX8828?

The maximum pulsed drain current (IDM) is specified as 600 mA.

Does the PJX8828 support low-voltage drive conditions?

Yes, the device is characterized for operation at various gate-source voltages, including 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 4.5 V.

What is the typical turn-on rise time?

The typical turn-on rise time (tr) is 5.7 ns under standard test conditions.

PJX8828_R1_00001PJX8828_R1_00001
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