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The PJX8828 is a single N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and features ESD protection within an SOT-563 package. The device supports a Drain-Source Voltage (VDS) of 30 V and a continuous Drain Current (ID) of 300 mA. Key electrical parameters include a Gate Threshold Voltage (VGS(th)) ranging from 0.4 V to 1.0 V, and a maximum Drain-Source On-State Resistance (RDS(on)) of 4.0 Ω at VGS=1.2V and ID=20mA. The total gate charge (Qg) is typically 0.9 nC. Thermal characteristics specify a power dissipation of 300 mW at 25°C ambient temperature with a junction-to-ambient thermal resistance of 417 °C/W.
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Select this component for low-current switching applications requiring a 30 V rating and compact SOT-563 footprint. Evaluate the RDS(on) values across different gate voltage levels to ensure compatibility with the driving logic levels available in the target circuit design.
This part belongs to the general-purpose enhancement mode MOSFET category designed for small signal switching tasks. It is intended for use in consumer electronics and industrial control systems where space constraints necessitate the SOT-563 surface-mount package format.
Cross-reference with other 30V N-Channel MOSFETs in the SOT-563 package. Ensure substitute parts match or exceed the 300 mA current rating and verify pinout compatibility for direct replacement.
The maximum pulsed drain current (IDM) is specified as 600 mA.
Yes, the device is characterized for operation at various gate-source voltages, including 1.2 V, 1.5 V, 1.8 V, 2.5 V, and 4.5 V.
The typical turn-on rise time (tr) is 5.7 ns under standard test conditions.