PJX8839_R1_00001

Overview

The PJX8839_R1_00001 is a P-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-563 package with the marking X39. The device features a drain-source voltage of -60 V and a continuous drain current of -200 mA at 25°C. Key electrical parameters include a maximum on-resistance of 4 Ω at VGS=-10V, a gate threshold voltage ranging from -1.0 V to -2.5 V, and a total gate charge of 1.1 nC. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Advanced Trench Process Technology for optimized performance
• Specially designed for relay driver and speed line drive applications
• Compliant with EU RoHS 2.0 directives and halogen-free green molding compound

Applications

• Relay driver circuits
• Speed line drive systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R1 suffix corresponds to a 4K pcs quantity on a 7-inch reel. Confirm that the component meets required environmental standards such as RoHS compliance and halogen-free specifications before finalizing procurement orders.

Selection Notes

Select this component based on its -60 V rating and -200 mA continuous current capability. Ensure the driving circuit can provide sufficient negative gate voltage to achieve the desired low on-resistance levels. Verify thermal management requirements against the specified power dissipation and thermal resistance values for the target operating environment.

Part Context

This part belongs to the PJX8839 series of P-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The series is engineered for general-purpose switching applications requiring reliable performance in compact surface-mount configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.