PJX8872B_R1_00001

$0.38

Description：MOSFET 2N-CH 60V 0.2A SOT563
Series：-

SKU:0a1a66d6ca45 Category: FET, MOSFET Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 60V 0.2A SOT563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Rds On (Max) @ Id, Vgs：3Ohm @ 600mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.82nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：34pF @ 25V
Power - Max：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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PJX8872B_R1_00001

Overview

The PJX8872B_R1_00001 is a dual N-Channel Enhancement Mode MOSFET manufactured by Panjit International Inc. It utilizes advanced trench process technology and is housed in an SOT-563 package. The device supports a Drain-Source Voltage (VDS) of 60 V and a Continuous Drain Current (ID) of 200 mA, with a Pulsed Drain Current (IDM) of 800 mA. The maximum Power Dissipation (PD) is 300 mW at 25°C ambient temperature. Electrical characteristics include a Gate Threshold Voltage (VGS(th)) ranging from 1.0 V to 2.5 V, and a typical Total Gate Charge (Qg) of 0.82 nC. Thermal resistance from junction to ambient (RθJA) is typically 417 °C/W.

Feature Summary

Advanced Trench Process Technology for optimized performance
Low On-State Resistance (RDS(on)) under specified gate voltage conditions
Lead-free construction compliant with EU RoHS 2.0 standards
Green molding compound meeting IEC 61249 standard requirements

Applications

Relay driver circuits
Speed line drive applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets required environmental standards such as RoHS 2.0 compliance before finalizing procurement specifications.

Selection Notes

Select this component based on its 60 V drain-source voltage rating and 200 mA continuous current capability. Ensure the application requires the specific RDS(on) thresholds provided for VGS levels of 10 V and 4.5 V. Verify thermal management requirements against the 300 mW power dissipation limit and 417 °C/W thermal resistance.

Part Context

This part belongs to the PJX8872B series of N-Channel Enhancement Mode MOSFETs produced by Panjit International Inc. The product family focuses on low-voltage switching applications utilizing trench technology within compact surface-mount packages designed for efficient PCB integration.