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Product Detailed Parameters
- Description：JFET N-CH 40V TO236AB
- Series：-
- Mfr：NXP Semiconductors
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：4 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
- Resistance - RDS(On)：30 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：TO-236AB
- Grade：-
- Qualification：-
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Overview
The PMBF4391 is a symmetrical silicon N-channel depletion-type junction field-effect transistor (JFET) manufactured by NXP Semiconductors. Designed for low-power chopper and switching applications in industrial thick and thin-film circuits, it operates within a SOT-23 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of 40 V, and a continuous drain current of 50 mA. The device features a maximum power dissipation of 250 mW and supports operating temperatures up to +150°C.
Feature Summary
- Symmetrical N-channel depletion-mode JFET structure
- Designed for low-power chopper and switching applications
- Suitable for integration into thick and thin-film circuits
Applications
- Low-power chopper circuits
- Industrial switching applications
- Thick-film circuit integration
- Thin-film circuit integration
Procurement Notes
Verify the specific ordering suffix and tape/reel specifications against the official NXP datasheet before procurement. Confirm RoHS compliance status and lead times directly with authorized distributors or NXP sales representatives, as availability may vary by region. Ensure the component meets all environmental and handling requirements specified in the manufacturer's documentation.
Selection Notes
Select this component when a symmetrical N-channel depletion-mode JFET is required for low-power industrial switching or chopper applications. Consider the SOT-23 package for space-constrained designs and verify that the 40 V breakdown voltage and 50 mA current ratings align with the circuit requirements. Evaluate thermal management needs given the 250 mW power dissipation limit.
Part Context
The PMBF4391 belongs to the family of silicon N-channel junction FETs produced by NXP Semiconductors. These devices are engineered for robust performance in industrial environments, offering reliable operation in both thick-film and thin-film hybrid circuit configurations. The part represents a standard solution for discrete switching and amplification tasks requiring depletion-mode characteristics.
Replacement Considerations
Consult the official NXP datasheet for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, current rating, and package type to ensure compatibility. Verify pinout symmetry and depletion-mode behavior if replacing with components from other manufacturers.
