PMBF4392,215

$0.35

Description：JFET N-CH 40V SOT23
Series：-

SKU:c0dcb751caaa Category: JFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 40V SOT23
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：40 V
Current - Drain (Idss) @ Vds (Vgs=0)：25 mA @ 20 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：14pF @ 20V
Resistance - RDS(On)：-
Power - Max：250 mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23 (TO-236AB)
Grade：-
Qualification：-

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PMBF4392,215

Overview

The PMBF4392,215 is a symmetrical silicon N-channel depletion type junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-23 envelope intended for thick and thin-film circuits. The device features a maximum drain-source voltage of 40 V and a total power dissipation of 250 mW at 40 °C ambient temperature. Key electrical characteristics include a drain current range of 5 mA to 75 mA at VDS = 20 V and VGS = 0, a gate-source cut-off voltage between 0.5 V and 5 V, and a maximum drain-source resistance of 60 Ω at 1 kHz.

Feature Summary

Symmetrical design with interchangeable drain and source terminals
Plastic microminiature SOT-23 package suitable for surface mounting
Depletion mode operation optimized for low-power chopper applications
Designed for integration into thick and thin-film industrial circuits

Applications

Low-power chopper circuits
Industrial switching applications
Thick-film circuit integration
Thin-film circuit integration

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product status documentation. Confirm that the component meets RoHS compliance requirements relevant to the target market. Ensure the procurement channel provides valid traceability for the April 1995 specification data sheet referenced. Check for any end-of-life notifications or alternative sourcing options if long-term supply continuity is required.

Selection Notes

Select this component when a symmetrical N-channel JFET with interchangeable pins is required for low-power switching. The SOT-23 package facilitates compact surface-mount designs. Verify that the 60 Ω on-resistance and 40 V voltage ratings align with the specific circuit load and supply constraints. Consider the depletion mode characteristic for appropriate biasing configurations in industrial signal processing.

Part Context

This part belongs to the PMBF439x series of N-channel FETs from NXP Semiconductors. The series includes PMBF4391, PMBF4392, and PMBF4393, which share identical physical packaging and basic structural specifications but differ in electrical parameters such as drain current and cut-off voltage ranges. The PMBF4392 represents the middle performance tier within this specific family grouping.