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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：80 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：10 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：30pF @ 10V (VGS)
- Resistance - RDS(On)：8 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ108,215 is a symmetrical N-channel junction Field-Effect Transistor (FET) manufactured by NXP Semiconductors. It is housed in a SOT23 plastic surface-mounted package with three leads. The device features high-speed switching capabilities and allows for the interchangeability of drain and source connections. A key electrical characteristic is its low on-state resistance at zero gate voltage, specified as less than 8 ohms for the PMBFJ108 variant. These attributes make it suitable for applications requiring efficient analog signal routing and precise commutation.
Feature Summary
- Symmetrical N-channel junction FET design enabling interchangeable drain and source connections
- High-speed switching performance optimized for rapid signal transitions
- Low on-state resistance at zero gate voltage ensuring minimal signal loss
Applications
- Analog switches
- Choppers and commutators
- Audio amplifiers
Procurement Notes
Verify the specific ordering suffix to confirm packaging details and manufacturing origin. Confirm current product status as datasheets may indicate historical reference only. Ensure compatibility with FR4 printed-circuit board mounting conditions when evaluating thermal characteristics. Cross-reference marking codes for quality assurance during assembly.
Selection Notes
Select this component for designs requiring symmetrical signal path characteristics and low distortion in analog circuits. Consider the SOT23 package constraints for space-limited layouts. Evaluate the low RDSon specification against required signal integrity levels. Ensure operating conditions remain within the absolute maximum ratings for drain-source and gate-source voltages.
Part Context
This component belongs to the PMBFJ series of N-channel junction FETs, which includes variants like the PMBFJ109 and PMBFJ110. These devices share the same SOT23 package and general structural design but differ in their specific on-state resistance values. The series is engineered for compact surface-mount applications where small form factors and reliable switching are critical.
Replacement Considerations
PMBFJ109 and PMBFJ110 are direct pin-compatible alternatives within the same family. Selection between these depends on the required on-state resistance threshold, as the PMBFJ109 offers approximately 12 ohms and the PMBFJ110 offers approximately 18 ohms at zero gate voltage.
