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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：5 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 10V (VGS)
- Resistance - RDS(On)：85 Ohms
- Power - Max：300 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ174,215 is a silicon symmetrical p-channel junction field-effect transistor (JFET) housed in a plastic SOT23 surface-mount package. It features interchangeable drain and source connections. Key electrical parameters include a drain-source voltage of 30 V, gate-source voltage of 30 V, and total power dissipation of 300 mW at 25 °C. The device exhibits a typical drain current of 20 mA at -VDS = 15 V and VGS = 0 V, with a maximum drain-source ON-resistance of 85 Ω.
Feature Summary
- Silicon symmetrical p-channel junction FET technology
- Interchangeable drain and source connections for flexible circuit design
- Plastic microminiature SOT23 surface-mount envelope
Applications
- Analogue switches
- Choppers
- Commutators
Procurement Notes
Verify the specific ordering suffix to confirm packaging details and manufacturing site markings. Ensure the component meets RoHS compliance standards as indicated in the product specification. Confirm that the application environment remains within the specified thermal and voltage limiting values to prevent permanent damage.
Selection Notes
Select this component when a small-signal p-channel JFET with low leakage current is required. The interchangeable pin configuration simplifies layout flexibility. Consider the specific drain current and ON-resistance limits relative to the load requirements. Verify compatibility with the intended switching frequency and operating temperature range.
Part Context
This device belongs to the PMBFJ17x series of P-channel silicon field-effect transistors manufactured by NXP Semiconductors. The series includes variants with different current and resistance characteristics, all sharing the same SOT23 package and symmetrical structure. These components are designed for general-purpose analogue signal processing applications using SMD technology.
Replacement Considerations
Direct substitutes within the same family include PMBFJ175, PMBFJ176, and PMBFJ177. Note that these alternatives have different drain current and ON-resistance specifications compared to the PMBFJ174. Ensure the replacement part's electrical parameters align with the original circuit design requirements before implementation.
