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Product Detailed Parameters
- Description：JFET P-CH 30V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 10V (VGS)
- Resistance - RDS(On)：250 Ohms
- Power - Max：300 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ176,215 is a P-channel silicon junction field-effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-23 surface-mount package with three leads. The device features symmetrical construction allowing interchangeability of drain and source connections. Key electrical parameters include a drain-source voltage rating of 30 V, a gate-source breakdown voltage of 30 V, and a total power dissipation of 300 mW at 25 °C. The typical drain current (IDSS) is 35 mA, while the maximum drain-source ON-resistance (RDSon) is 250 Ω.
Feature Summary
- Symmetrical P-channel JFET design enabling interchangeable drain and source terminals for flexible circuit layout.
- Plastic microminiature SOT-23 surface-mount envelope suitable for automated assembly processes.
- High gate-source breakdown voltage capability supporting robust signal switching applications.
Applications
- Analogue switches
- Choppers
- Commutators
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when a P-channel JFET with moderate current handling and low on-resistance is required for analogue signal routing. The symmetrical pinout simplifies PCB layout compared to asymmetric alternatives. Ensure the application voltage does not exceed the 30 V limit and that thermal constraints allow for 300 mW dissipation in free air.
Part Context
This part belongs to the PMBFJ174 through PMBFJ177 family of P-channel silicon FETs from NXP. These devices share identical physical packaging and pin configurations but differ in their electrical characteristics, specifically drain current and on-resistance ranges. The PMBFJ176 represents the mid-range performance tier within this series, balancing current capacity with resistance levels.
Replacement Considerations
Direct substitutes within the same family include PMBFJ174, PMBFJ175, and PMBFJ177. Note that these variants have different IDSS and RDSon specifications; verify compatibility before substitution. Cross-brand replacements require careful evaluation of pinout symmetry and voltage ratings.
FAQ
Can the drain and source pins be swapped?
Yes, the PMBFJ176 is a symmetrical JFET, meaning the drain and source connections are interchangeable without affecting functionality.
What is the maximum power dissipation?
The total power dissipation is rated at 300 mW when the ambient temperature is 25 °C.
Is this device suitable for automotive applications?
No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and should not be used in automotive equipment or applications.
