PMBFJ308,215

Overview

The PMBFJ308,215 is an N-channel silicon junction field-effect transistor (JFET) housed in a SOT-23 surface-mount package. It features symmetrical drain and source connections with a maximum drain-source voltage of ±25 V. The device exhibits a gate-source cut-off voltage range from -1 V to -6.5 V and a typical drain current of 60 mA at zero gate bias. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C.

Feature Summary

• Low noise performance suitable for sensitive signal paths
• Interchangeable drain and source terminals for flexible circuit layout
• High gain characteristics for effective amplification

Applications

• AM input stage in car radios
• VHF amplifiers
• Oscillators and mixers

Procurement Notes

Verify the specific part marking code '48' on the component body to confirm authenticity as the PMBFJ308 variant within the PMBFJ308/309/310 series. Ensure the ordering suffix matches the required tape-and-reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration into production designs.

Selection Notes

Select this component when low noise and high gain are critical requirements for RF front-end stages. The symmetrical pinout allows for interchangeable drain and source placement, simplifying PCB routing. Verify that the operating conditions remain within the specified absolute maximum ratings to prevent permanent device damage or reliability degradation during operation.

Part Context

This device belongs to the PMBFJ308, PMBFJ309, and PMBFJ310 family of N-channel silicon JFETs. All variants share identical physical packages and limiting values but differ in electrical parameters such as gate-source cut-off voltage and drain current ranges. The PMBFJ308 specifically targets applications requiring higher drain current capabilities compared to other members of the series.

Replacement Considerations

PMBFJ309 and PMBFJ310 are direct functional substitutes within the same package and feature set. Substitution requires verification that the alternative part's gate-source cut-off voltage and drain current specifications align with the original circuit design requirements.