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Product Detailed Parameters
- Description：JFET N-CH 25V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：25 V
- Drain to Source Voltage (Vdss)：25 V
- Current - Drain (Idss) @ Vds (Vgs=0)：12 mA @ 10 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds：5pF @ 10V
- Resistance - RDS(On)：50 Ohms
- Power - Max：250 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Grade：-
- Qualification：-
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Overview
The PMBFJ309,215 is an N-channel silicon junction field-effect transistor housed in a SOT23 plastic surface-mounted package. It features a drain-source voltage rating of ±25 V and a gate-source cut-off voltage range of -1 V to -4 V at ID = 1 µA. The device supports a maximum total power dissipation of 250 mW at 25 °C ambient temperature. Drain current (IDSS) ranges from 12 mA to 30 mA with VGS = 0 V and VDS = 10 V. Forward transfer admittance is specified at a minimum of 10 mS under standard test conditions.
Feature Summary
- Low noise performance suitable for sensitive signal processing
- Interchangeable drain and source connections for flexible circuit design
- High gain characteristics for effective amplification
Applications
- AM input stage in car radios
- VHF amplifiers
- Oscillators and mixers
Procurement Notes
Verify the specific part marking code '49' on the component body to confirm it matches the PMBFJ309 variant rather than the PMBFJ308 or PMBFJ310. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and assembly. Confirm that the application environment remains within the specified thermal resistance and junction temperature limits to prevent permanent damage.
Selection Notes
Select this component when low noise and high gain are required for RF applications. The interchangeable pinout simplifies layout compared to fixed-pin FETs. Verify that the required gate-source cut-off voltage falls within the -1 V to -4 V range. Ensure the operating frequency aligns with the specified dynamic characteristics for admittance and capacitance values.
Part Context
This device belongs to the PMBFJ308/309/310 family of symmetrical N-channel silicon JFETs. All variants share the same SOT23 package and general electrical structure but differ in specific threshold and current parameters. The PMBFJ309 offers a narrower gate-source cut-off voltage range compared to the other family members, providing distinct biasing characteristics for specific amplifier designs.
Replacement Considerations
PMBFJ308 and PMBFJ310 are direct physical replacements within the same package but have different electrical specifications. Substitution requires verifying that the alternative's gate-source cut-off voltage and drain current ranges meet the circuit requirements. No other cross-brand substitutes are documented in the official data sheet.
