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The PMBT3946YPN-QH is an NPN/PNP dual bipolar junction transistor (BJT) manufactured by Nexperia. It utilizes silicon technology and is housed in a SOT363-6 surface-mount package. The device supports a maximum DC collector current of 200 mA. Key voltage ratings include a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) ranging from 40 V to 60 V depending on the specific transistor within the pair, and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 350 mW. The gain-bandwidth product (fT) is 300 MHz, with a minimum DC current gain (hFE) of 30. Operating temperatures range from -55°C to +150°C.
Verify the suffix QH indicates automotive grade qualification against the official datasheet. Confirm the specific pinout matches the SOT363-6 standard. Ensure the ordering part number aligns with the required reel or cut tape packaging options available from authorized distributors.
Select this component when a compact dual BJT solution is needed for space-constrained designs. The 40 V rating suits low-voltage logic interfacing. Verify thermal management requirements as the 350 mW dissipation limit applies to the combined package. Check if the specific VCBO values meet circuit isolation needs.
This part belongs to the PMBT39xx series of general-purpose transistors. It serves as the NPN/PNP complement to the PMBT3906YS (PNP/PNP) and pairs with the PMBT3904YS (NPN/NPN). The series is designed for high-density circuit layouts using small SMD packages.
Direct functional substitutes include the PMBT3946YS. For automotive applications, verify equivalent AEC-Q101 qualified parts from other manufacturers that match the SOT363-6 footprint and electrical specifications.