Single Bipolar Transistors PMBT5550,215 product image

PMBT5550,215

$0.22
  • Description:TRANS NPN 140V 0.3A TO-236AB
  • Series:-

SKU:135fc02d792a Category: Brand:

  
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PMBT5550,215 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN 140V 0.3A TO-236AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for PMBT5550,215

  • Description:TRANS NPN 140V 0.3A TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for PMBT5550,215

PMBT5550,215

Single Bipolar Transistors Overview

The PMBT5550,215 is an NPN high-voltage transistor manufactured by Nexperia USA Inc. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package with three terminals. The device supports a maximum collector-emitter voltage of 140 V and a maximum DC collector current of 300 mA. Peak collector current reaches 600 mA, while total power dissipation is rated at 250 mW. The component operates within a junction temperature range up to 150 °C and features a transition frequency of 100 MHz.

Single Bipolar Transistors Feature Summary

  • AEC-Q101 qualified for automotive applications
  • High voltage capability up to 140 V
  • Low current handling up to 300 mA

Single Bipolar Transistors Applications

  • General purpose switching
  • Amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor is required for high-voltage environments. The SOT23 package facilitates space-constrained designs. Ensure the application voltage does not exceed the 140 V collector-emitter rating. Consider the thermal resistance characteristics if operating near the maximum power dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to Nexperia's portfolio of general-purpose bipolar junction transistors. It serves as a high-voltage variant within the SOT23 form factor family. The device complements other low-current transistors designed for portable and telecommunications equipment where size and voltage isolation are critical design parameters.

Single Bipolar Transistors Replacement Considerations

Consult official Nexperia documentation for verified cross-references. No substitute part numbers are confirmed in the provided source material.

Single Bipolar Transistors FAQ

Is the PMBT5550 suitable for automotive electronics?

Yes, the component is AEC-Q101 qualified, indicating it meets the stress test qualification standards for discrete semiconductors in automotive applications.

What is the maximum peak collector current?

The maximum peak collector current is 600 mA for single pulses with a duration of 1 ms or less.

How is the pin configuration defined?

Pin 1 is the base, Pin 2 is the emitter, and Pin 3 is the collector.

PMBT5550,215PMBT5550,215
$0.22
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