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Product Detailed Parameters
- Description：TRANS 2NPN 300V 100MA 6-TSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：300V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 30mA, 10V
- Power - Max：290mW
- Frequency - Transition：50MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：6-TSOP
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The PMBTA42DS-Q is a high-voltage NPN/NPN double transistor housed in a compact SOT457 (SC-74) TSOP6 surface-mounted device plastic package. It features two electrically isolated transistors within a single component, offering a collector-emitter voltage of 300 V and a continuous collector current of 100 mA per transistor. The device supports a peak collector current of 200 mA for single pulses up to 1 ms. Qualified according to the AEC-Q101 standard, it is designed for robust performance in automotive environments. Key electrical characteristics include a DC current gain ranging from 25 to 40 under specified conditions and a transition frequency of 50 MHz.
Feature Summary
- Contains two electrically isolated NPN transistors within a single small SMD plastic package
- Qualified according to AEC-Q101 standard for automotive applications
- High breakdown voltage capability suitable for demanding switching environments
Applications
- Automotive high-side and low-side switches
- Voltage regulators
- Telecom line interface circuits
- CRT TV displays
- Computer monitors
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements before finalizing procurement decisions.
Selection Notes
Select this component when space-constrained designs require dual isolated transistors with high voltage ratings. Ensure the application operates within the 300 V collector-emitter limit and 100 mA continuous current constraints. Verify thermal management strategies are adequate for the specified junction-to-ambient resistance values.
Part Context
This part belongs to Nexperia's portfolio of high-voltage discrete semiconductors designed for general-purpose switching and amplification. It serves as a compact alternative to using separate discrete transistors, simplifying PCB layout while maintaining high voltage isolation between the two internal channels.
Replacement Considerations
Check for direct equivalents such as the PMBTA92 PNP complement or other AEC-Q101 qualified NPN/NPN double transistors in the SOT457 package. Ensure pinout compatibility and matching voltage/current ratings before substitution.
FAQ
What is the maximum collector-emitter voltage for each transistor?
The maximum collector-emitter voltage (VCEO) is 300 V with the base open.
Are the two transistors electrically connected?
No, the device contains two electrically isolated transistors within the same package.
Is this component suitable for automotive use?
Yes, it is qualified according to the AEC-Q101 standard and recommended for automotive applications.
