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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta), 3.4A (Ta)
- Rds On (Max) @ Id, Vgs：34mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V
- Power - Max：490mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMCPB5530X is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in a DFN2020-6 (SOT1118) package. The N-channel device features a drain-source voltage of 20 V, continuous drain current of 5.3 A, and on-state resistance of 26 mΩ at VGS=4.5V. The P-channel counterpart offers a 20 V rating, 4.5 A continuous current, and 55 mΩ on-state resistance at VGS=-4.5V. Both channels operate within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Very fast switching performance enabled by Trench MOSFET technology
- Small and leadless ultra thin SMD plastic package measuring 2 x 2 x 0.65 mm
- Exposed drain pad designed for excellent thermal conduction
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact DFN2020-6 form factor required for your PCB footprint. Confirm that the requested part number aligns with current production status and availability through authorized distribution channels before finalizing procurement plans.
Selection Notes
Select this component when space-constrained designs require complementary N/P-channel MOSFETs in a single leadless package. The low on-state resistance values support efficient power handling in portable applications. Verify that the 20 V breakdown voltage meets circuit requirements and that the thermal characteristics suit the intended heat dissipation environment.
Part Context
This dual MOSFET integrates both N-channel and P-channel enhancement mode transistors into one compact unit. It replaces discrete solutions by saving board area while maintaining high switching speeds. The design supports modern portable electronics where size and efficiency are critical constraints.
Replacement Considerations
Check for direct cross-reference part numbers from Nexperia or other manufacturers offering identical pinouts and electrical ratings in the DFN2020-6 package. Ensure any substitute maintains the same complementary configuration and thermal performance capabilities.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage rating is ±12 V for both the N-channel and P-channel devices.
Does the package include leads?
No, the PMCPB5530X uses a leadless DFN2020-6 (SOT1118) plastic package with an exposed drain pad for mounting and thermal management.
What is the typical total gate charge for the N-channel?
The typical total gate charge (QG(tot)) for the N-channel is 14.4 nC under conditions of VDS=10V, ID=3A, and VGS=4.5V.
