PMCXB900UELZ

$0.46

Description：MOSFET N/P-CH 20V 0.6A 6DFN
Series：-

SKU:6ac9dbe79221 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.6A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：600mA
Rds On (Max) @ Id, Vgs：620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：21.3pF @ 10V
Power - Max：380mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMCXB900UELZ

Overview

The PMCXB900UEL is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a leadless DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. The N-channel device supports a drain-source voltage of 20 V and a continuous drain current of 600 mA at 25 °C, with a typical on-state resistance of 470 mΩ. The P-channel counterpart handles -20 V and -500 mA, exhibiting a typical on-state resistance of 1.02 Ω. Both channels offer low leakage current and ESD protection exceeding 1 kV HBM.

Feature Summary

Trench MOSFET technology enables very low threshold voltage suitable for portable applications
Leadless ultra-small and ultra-thin SMD plastic package design
ElectroStatic Discharge protection capability greater than 1 kV HBM

Applications

Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package variant and marking code alignment. Confirm that the DFN1010B-6 footprint matches your PCB layout requirements. Check thermal resistance values relative to your specific copper pad area, as dissipation ratings vary significantly between free air and mounted conditions. Ensure gate-source voltage limits are respected within your circuit design parameters.

Selection Notes

Select this component when space constraints require an ultra-thin profile under 0.4 mm height. Choose the N-channel or P-channel characteristics based on whether positive or negative switching logic is required. Consider the low threshold voltage for compatibility with low-voltage control signals in battery-operated devices. Evaluate the thermal performance against your expected duty cycle and ambient temperature conditions using the provided derating curves.

Part Context

This device belongs to Nexperia's portfolio of small-signal complementary MOSFETs designed for high-density surface-mount applications. The DFN1010B-6 package provides thermal efficiency through exposed drain pads while minimizing board footprint. It serves as a compact solution for signal switching and power management tasks where size and weight are critical factors in portable electronic equipment design.