PMCXB900UEZ

$0.44

Description：MOSFET N/P-CH 20V 0.6A 6DFN
Series：TrenchFET®

SKU:ab687f70bcb9 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.6A 6DFN
Series：TrenchFET®
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：600mA, 500mA
Rds On (Max) @ Id, Vgs：620mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：21.3pF @ 10V
Power - Max：265mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：DFN1010B-6
Grade：-
Qualification：-

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PMCXB900UEZ

Overview

The PMCXB900UE is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a leadless DFN1010B-6 (SOT1216) package measuring 1.1 x 1.0 x 0.37 mm. The N-channel device has a drain-source voltage of 20 V and on-state resistance of 470 mΩ at VGS=4.5 V, ID=600 mA. The P-channel device has a drain-source voltage of -20 V and on-state resistance of 1.02 Ω at VGS=-4.5 V, ID=-500 mA. Both channels exhibit a low threshold voltage of 0.7 V typical and ESD protection exceeding 1 kV HBM.

Feature Summary

Trench MOSFET technology for enhanced performance
Very low threshold voltage suitable for portable applications
Leadless ultra-small and ultra-thin SMD plastic package
ElectroStatic Discharge protection greater than 1 kV HBM

Applications

Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and marking codes. Confirm that the DFN1010B-6 footprint matches your PCB design guidelines. Check for any recent revision history updates that may affect thermal or electrical specifications. Ensure compatibility with your assembly process requirements for this leadless package type.

Selection Notes

Select this component when space constraints require an ultra-thin, leadless surface-mount solution. The complementary N/P configuration simplifies circuit design for level shifting and driver applications. Consider the low threshold voltage for efficient operation in battery-powered systems. Evaluate thermal dissipation capabilities based on the specific PCB copper area available for the drain mounting pad.

Part Context

This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for high-density electronics. The DFN1010B-6 package is part of the SOT1216 family, offering minimal board space consumption. It targets consumer electronics and portable devices where size and power efficiency are critical design parameters.