ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A (Ta)
- Rds On (Max) @ Id, Vgs：40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V
- Power - Max：490mW (Ta), 8.33W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
Download product information
Overview
The PMDPB30XNZ is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a 20 V drain-source voltage, 5.3 A continuous drain current per transistor, and a typical on-state resistance of 40 mΩ at VGS = 4.5 V. The device supports a gate-source voltage range of ±12 V and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Very fast switching characteristics enabled by Trench MOSFET technology
- Small and leadless ultra-thin SMD plastic package design
- Exposed drain pad providing excellent thermal conduction
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disc and computing power management
Procurement Notes
Verify the specific ordering suffix 'Z' against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the DFN2020-6 package outline and pin configuration defined in the datasheet before integration into the design.
Selection Notes
Select this component for applications requiring low on-state resistance and fast switching in compact spaces. The dual N-channel configuration allows for efficient power management in portable electronics. Verify that the required drain current and voltage ratings align with the system's operational limits and thermal constraints.
Part Context
This part belongs to Nexperia's portfolio of Trench MOSFETs designed for high efficiency and small form factors. The PMDPB30XN series utilizes advanced silicon technology to minimize conduction losses while maintaining robust performance in demanding environments suitable for consumer and industrial electronics.
Replacement Considerations
Consult the official Nexperia replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and package dimensions.
