PMDPB55XP,115

$0.38

Description：MOSFET 2P-CH 20V 3.4A 6HUSON
Series：-

SKU:1d6b01a4a6ae Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 3.4A 6HUSON
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.4A
Rds On (Max) @ Id, Vgs：70mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds：785pF @ 10V
Power - Max：490mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UFDFN Exposed Pad
Supplier Device Package：6-HUSON (2x2)
Grade：-
Qualification：-

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PMDPB55XP,115

Overview

The PMDPB55XP,115 is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a DFN2020-6 (SOT1118) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of 20 V, continuous drain current of 4.5 A, and on-state resistance of 55 mΩ at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Very fast switching performance enabled by Trench MOSFET technology
Small and leadless ultra thin SMD plastic package design
Exposed drain pad providing excellent thermal conduction

Applications

Charging switch for portable devices
DC/DC converters
Small brushless DC motor drive
Power management in battery-driven portables
Hard disc and computing power management

Procurement Notes

Verify the complete part number including the suffix

Selection Notes

Select this component for applications requiring compact dual P-channel switching solutions. The low on-state resistance supports efficient power handling in small form factors. Ensure gate drive voltages remain within the specified limits to maintain optimal performance and reliability during operation.

Part Context

This device belongs to Nexperia's portfolio of Trench MOSFETs designed for high-efficiency power management. The DFN2020-6 package offers a leadless surface-mount solution suitable for automated assembly processes. It serves as a compact alternative to traditional through-hole or larger surface-mount packages in space-constrained electronic designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum junction temperature for the PMDPB55XP?

The maximum junction temperature is +150 °C.

Does the PMDPB55XP have automotive qualification?

No, unless expressly stated otherwise, the product is not suitable for automotive use and is not qualified according to automotive testing requirements.