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The PMDPB70EN,115 is a dual P-channel enhancement-mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 20 V and a continuous drain current of 4.2 A. The device exhibits a low on-state resistance of 66 mΩ at a gate-source voltage of -4.5 V. Packaged in a DFN-2020-6 (SOT1118) surface-mount housing, it supports a power dissipation of 8.33 W. Operating temperatures range from -55°C to +150°C, with a typical gate charge of 7.5 nC.
Verify the specific suffix against official Nexperia documentation to confirm exact tape-and-reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through the manufacturer's latest product compliance declarations before finalizing procurement orders.
Select this component when a compact dual P-channel solution is required for low-voltage power paths. Evaluate thermal performance based on the specified power dissipation and package thermal resistance. Compare the on-resistance characteristics against system efficiency requirements to ensure adequate current handling capabilities.
This component belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and industrial electronics. The DFN-2020-6 package provides a robust thermal path while maintaining a minimal footprint. It serves as a specialized alternative to discrete single-channel solutions in space-constrained designs.
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternatives from other manufacturers.