PMDPB70EN,115

PMDPB70EN,115

$0.17
  • Description:MOSFET 2N-CH 30V 3.5A 6HUSON
  • Series:-

SKU:1e2b0157ec6b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 3.5A 6HUSON
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:3.5A
  • Rds On (Max) @ Id, Vgs:57mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:130pF @ 15V
  • Power - Max:510mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UFDFN Exposed Pad
  • Supplier Device Package:6-HUSON (2x2)
  • Grade:-
  • Qualification:-

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PMDPB70EN,115

Overview

The PMDPB70EN,115 is a dual P-channel enhancement-mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 20 V and a continuous drain current of 4.2 A. The device exhibits a low on-state resistance of 66 mΩ at a gate-source voltage of -4.5 V. Packaged in a DFN-2020-6 (SOT1118) surface-mount housing, it supports a power dissipation of 8.33 W. Operating temperatures range from -55°C to +150°C, with a typical gate charge of 7.5 nC.

Feature Summary

  • Dual P-channel configuration for efficient high-side switching applications
  • Low on-state resistance minimizes conduction losses
  • Compact leadless package design optimizes PCB space utilization

Applications

  • Power management circuits
  • Load switching applications
  • DC/DC converter output stages

Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm exact tape-and-reel specifications. Ensure the ordering part number matches the required packaging format. Confirm RoHS compliance status through the manufacturer's latest product compliance declarations before finalizing procurement orders.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage power paths. Evaluate thermal performance based on the specified power dissipation and package thermal resistance. Compare the on-resistance characteristics against system efficiency requirements to ensure adequate current handling capabilities.

Part Context

This component belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable and industrial electronics. The DFN-2020-6 package provides a robust thermal path while maintaining a minimal footprint. It serves as a specialized alternative to discrete single-channel solutions in space-constrained designs.

Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternatives from other manufacturers.

PMDPB70EN,115PMDPB70EN,115
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