PMDPB70XP,115

Overview

The PMDPB70XP,115 is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It features a 30 V drain-source voltage rating and a continuous drain current of 3.8 A per transistor at 25 °C. The device exhibits a typical on-state resistance of 87 mΩ at VGS = -4.5 V. Operating within a junction temperature range of -55 °C to +150 °C, it is housed in the SOT1118 (HUSON6) leadless package measuring 2 x 2 x 0.65 mm with an exposed drain pad for thermal management.

Feature Summary

• Dual P-channel configuration in a single ultra-thin leadless package
• Trench MOSFET technology enabling very fast switching speeds
• Exposed drain pad designed for excellent thermal conduction

Applications

• Charging switch for portable devices
• DC/DC converters
• Small brushless DC motor drive
• Power management in battery-driven portables
• Hard disc and computing power management

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when space constraints require a dual P-channel solution in a leadless footprint. The HUSON6 package offers low profile dimensions suitable for dense PCB layouts. Ensure the application operates within the 30 V limit and accounts for the thermal resistance characteristics provided in the datasheet for adequate heat dissipation.

Part Context

This part belongs to Nexperia's portfolio of small signal MOSFETs designed for surface-mount applications. The SOT1118 package is part of the HUSON family, which emphasizes thermal performance and miniaturization. It serves as a compact alternative to larger discrete packages for dual-channel power switching requirements.

Replacement Considerations

Check pinout compatibility and electrical ratings against existing designs. Verify that the replacement device supports the required gate drive voltages and thermal dissipation capabilities for the specific PCB layout.