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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 2.7A 6HUSON
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.7A (Ta)
- Rds On (Max) @ Id, Vgs：99mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：258pF @ 15V
- Power - Max：510mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-HUSON (2x2)
- Grade：-
- Qualification：-
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Overview
The PMDPB95XNE2 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020-6 (SOT1118) plastic package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 30 V and a gate-source voltage of ±12 V. Each transistor handles a continuous drain current of 2.7 A at 25 °C, with a peak current of 11 A. The typical on-state resistance is 77 mΩ at VGS = 4.5 V and 2.8 A. It features an exposed drain pad for thermal conduction and ESD protection exceeding 2 kV HBM.
Feature Summary
- Dual N-channel configuration within a compact leadless SMD package
- Trench MOSFET technology enabling very fast switching speeds
- Exposed drain pad designed for excellent thermal conduction
- Integrated ElectroStatic Discharge protection exceeding 2 kV HBM
Applications
- Charging switch for portable devices
- DC-to-DC converters
- Small brushless DC motor drive
- Power management in battery-driven portables
- Hard disk and computing power management
Procurement Notes
Verify the specific ordering code PMDPB95XNE2 against the manufacturer's current product database to confirm active status and availability. Ensure the design utilizes the correct DFN2020-6 footprint as detailed in the datasheet. Confirm that the application environment remains within the specified junction temperature limits of -55 °C to 150 °C. Validate that the PCB layout supports the required thermal dissipation characteristics for the exposed drain pad.
Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. The 30 V rating suits low-voltage logic applications. The Trench MOSFET architecture provides efficient switching performance. Verify that the 2.7 A continuous current rating meets the load requirements. Ensure the gate drive voltage aligns with the specified RDSon test conditions for optimal efficiency.
Part Context
This device belongs to Nexperia's portfolio of small-signal and logic level MOSFETs. It shares the DFN2020-6 package form factor with other series members but differs in internal die configuration to provide dual channel functionality. The marking code '3B' identifies this specific part number on the component surface.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must consult official Nexperia channels or updated cross-reference lists for verified alternatives.
