PMDT290UCEH

$0.10

Description：MOSFET N/P-CH 20V 0.8A SOT666
Series：-

SKU:d07622049c20 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.8A SOT666
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel Complementary
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs：380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V, 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V, 87pF @ 10V
Power - Max：330mW (Ta), 1.09W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-666
Grade：Automotive
Qualification：AEC-Q101

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PMDT290UCEH

Overview

The PMDT290UCEH is a complementary N/P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 surface-mount package. The N-channel device supports a drain-source voltage of 20 V and a continuous drain current of 800 mA, with a maximum on-state resistance of 380 mΩ at VGS = 4.5 V. The P-channel counterpart provides a drain-source voltage of -20 V and a continuous drain current of -550 mA, featuring a maximum on-state resistance of 0.85 Ω at VGS = -4.5 V. Both channels operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Very fast switching performance enabled by Trench MOSFET technology
Integrated electrostatic discharge protection up to 2 kV

Applications

Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and marking codes. Confirm that the component meets all required electrical specifications for the intended application environment. Ensure compatibility with standard surface-mount assembly processes for the SOT666 package type.

Selection Notes

Select this component for designs requiring a compact complementary pair in a single ultra-small package. The low on-state resistance of the N-channel device suits efficient switching applications. Verify thermal management requirements based on the specified power dissipation limits and ambient operating conditions.

Part Context

This part belongs to Nexperia's portfolio of small-signal field-effect transistors designed for space-constrained electronics. It utilizes advanced Trench MOSFET technology to achieve high switching speeds within a minimal footprint. The SOT666 package allows for dense board layouts while maintaining reliable performance across industrial temperature ranges.