PMDT670UPE,115

Overview

The PMDT670UPE is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology in an SOT666 surface-mounted package. It features a drain-source voltage of -20 V and a continuous drain current of -550 mA per transistor at 25 °C. The device provides a typical on-state resistance of 0.67 Ω at VGS = -4.5 V and ID = -400 mA. Gate-source voltage limits are ±8 V, with a threshold voltage range of -0.5 V to -1.3 V. Total power dissipation reaches 500 mW per device at 25 °C ambient temperature.

Feature Summary

• Dual P-channel configuration within an ultra-small and flat lead SOT666 plastic package
• Trench MOSFET technology enabling very fast switching performance
• Electrostatic discharge protection rated up to 2 kV according to Human Body Model standards

Applications

• Relay driver circuits
• High-speed line drivers
• High-side load switches
• General switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel quantity or tape-and-reel specifications. Confirm that the component meets non-automotive qualification requirements if intended for consumer electronics. Ensure design-in compatibility with standard FR4 printed-circuit board footprints for proper thermal management during assembly.

Selection Notes

Select this component for applications requiring compact dual P-channel switching solutions where space constraints limit the use of discrete single transistors. The low gate charge and fast switching characteristics make it suitable for high-frequency operation. Verify that the required gate drive voltage aligns with the specified threshold and on-resistance parameters for optimal efficiency.

Part Context

This device belongs to Nexperia's portfolio of small-signal Trench MOSFETs designed for portable and space-sensitive electronics. The SOT666 package offers a leadless, ultra-thin form factor compared to traditional plastic packages. It serves as a complementary solution to N-channel variants within the same product family for push-pull or half-bridge configurations.

Replacement Considerations

Direct replacements must match the SOT666 package, dual P-channel topology, and -20 V / -550 mA ratings. Verify pinout compatibility, specifically the interleaved source-gate-drain arrangement. Check that substitute devices offer comparable on-resistance and ESD protection levels to maintain circuit performance integrity.