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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.57A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：570mA (Ta), 2.3A (Tc)
- Rds On (Max) @ Id, Vgs：770mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：53.5pF @ 10V
- Power - Max：280mW (Ta), 6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1010B-6
- Grade：-
- Qualification：-
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Overview
The PMDXB590UPE is a dual P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN1010B-6 (SOT1216) plastic package with dimensions of 1.1 mm x 1.0 mm x 0.37 mm. The device supports a drain-source voltage of -20 V and a gate-source voltage range of -8 V to 8 V. At VGS = -4.5 V, the typical drain current is -0.57 A (Tamb) or -2.3 A (Tsp), with a maximum on-state resistance of 770 mΩ at 25 °C.
Feature Summary
- Low threshold voltage for efficient drive
- Very fast switching performance via Trench MOSFET technology
- ElectroStatic Discharge protection typically exceeding 2 kV HBM
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix 'UPE' against the manufacturer's latest documentation to confirm the exact reel configuration and marking code. Ensure the design accommodates the thermal characteristics defined for the DFN1010B-6 package, specifically regarding junction-to-ambient resistance values under different PCB mounting conditions.
Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage applications. The ultra-thin profile suits space-constrained designs. Evaluate the on-state resistance requirements against the specified limits at operating temperatures to ensure adequate current handling capabilities within the thermal constraints of the target PCB footprint.
Part Context
This part belongs to Nexperia's portfolio of small-signal MOSFETs designed for portable electronics and general-purpose switching. The DFN1010B-6 package provides a balance between thermal dissipation and minimal board area usage compared to traditional leaded packages.
Replacement Considerations
Check for direct substitutes such as the PMDXB590UNEZ variant, ensuring pinout compatibility and identical electrical specifications before substitution.
FAQ
What is the maximum peak drain current capability?
The device supports a peak drain current of -9.2 A for single pulses with a duration of 10 µs or less.
How does the on-state resistance vary with temperature?
The RDSon increases significantly at higher temperatures; it rises from a typical 590 mΩ at 25 °C to approximately 890 mΩ at 150 °C under standard test conditions.
