PMEM1505NG,115

Single Bipolar Transistors Overview

The PMEM1505NG is an NPN transistor and Schottky barrier rectifier module in a SOT353 package. The NPN transistor features a collector-emitter voltage of 15 V and continuous collector current up to 0.5 A. The integrated planar Schottky diode offers a continuous reverse voltage of 20 V and forward current capability of 0.5 A. Total power dissipation is rated at 300 mW. The device includes low saturation voltage for the transistor and ultra-high-speed switching with very low forward voltage for the diode.

Single Bipolar Transistors Feature Summary

• Combines an NPN transistor with low collector-emitter saturation voltage and a planar Schottky barrier rectifier with integrated guard ring stress protection.
• Provides high current capability up to 0.5 A for both components within a small plastic surface-mounted package.
• Features ultra-high-speed switching and very low forward voltage characteristics for the Schottky diode.

Single Bipolar Transistors Applications

• DC-to-DC converters
• Inductive load drivers
• General purpose load drivers
• Reverse polarity protection circuits
• MOSFET drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm manufacturing origin, as codes indicate production in Hong Kong, Malaysia, or China. Ensure the component status matches current availability requirements by consulting the latest product data sheet from NXP Semiconductors before initiating designs.

Single Bipolar Transistors Selection Notes

Select this module when board area reduction and pick-and-place cost savings are priorities. It is suitable for applications requiring combined switching and freewheeling functions. Consider the thermal resistance values and total power dissipation limits relative to the ambient temperature and mounting conditions on the FR4 printed-circuit board.

Single Bipolar Transistors Part Context

This component integrates discrete semiconductor functions into a single surface-mount device. It serves as a compact solution for driving inductive loads where a flyback diode is required alongside the switching transistor. The PNP complement is available as the PMEM1505PG.

Single Bipolar Transistors Replacement Considerations

PMEM1505PG (PNP complement)

Single Bipolar Transistors FAQ

What is the pin configuration for the PMEM1505NG?

Pin 1 is the anode, Pin 2 is the base, Pin 3 is the emitter, Pin 4 is the collector, and Pin 5 is the cathode.

What is the maximum peak collector current for the NPN transistor?

The peak collector current (ICM) is rated at 1 A.

Does the Schottky diode include protection features?

Yes, the planar Schottky barrier rectifier includes an integrated guard ring for stress protection.