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PMF400UN,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 30V 830MA SOT323-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMF400UN,115
- Description：MOSFET N-CH 30V 830MA SOT323-3
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：830mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：480mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.89 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：43 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：560mW (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-70
- Package / Case：SC-70, SOT-323
Single FETs, MOSFETs datasheet and documents for PMF400UN,115
Single FETs, MOSFETs Overview
The PMF400UN is an N-channel enhancement mode field-effect transistor utilizing μTrenchMOS technology. It operates within a drain-source voltage range of up to 30 V and supports a continuous drain current of 0.83 A at 25 °C. The device features a maximum on-state resistance of 480 mΩ at VGS = 4.5 V. Total power dissipation reaches 0.56 W at 25 °C. Gate-source threshold voltage typically ranges from 0.45 V to 1 V. Input capacitance measures approximately 43 pF.
Single FETs, MOSFETs Feature Summary
- Utilizes μTrenchMOS technology for low on-state resistance
- Features a footprint 40% smaller than SOT23 packages
- Designed with low threshold voltage for efficient driver circuits
Single FETs, MOSFETs Applications
- Driver circuits
- Switching in portable appliances
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer status carefully, as the original NXP Standard Product business transitioned to Nexperia in February 2017. Confirm that the datasheet references align with the current supplier entity. Ensure the ordering suffix matches the specific package variant required for your design. Check for any Customer Product/Process Change Notifications regarding recent manufacturing updates.
Single FETs, MOSFETs Selection Notes
Select this component when space constraints are critical due to its compact SC-70 package. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers. Evaluate the thermal performance against your expected solder point temperatures. Verify that the peak drain current requirements fit within the specified safe operating area limits.
Single FETs, MOSFETs Part Context
This device belongs to the N-channel MOSFET category designed for surface-mount applications. It represents a shift toward miniaturized power switching solutions using advanced trench technology. The product line focuses on balancing electrical performance with physical size reduction for consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Cross-reference pin configurations and electrical characteristics before implementation.
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