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PMG45UN,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 20V 3A 6TSSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMG45UN,115
- Description：MOSFET N-CH 20V 3A 6TSSOP
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：55mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.3 nC @ 4.5 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：184 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：375mW (Ta), 4.35W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSSOP
- Package / Case：6-TSSOP, SC-88, SOT-363
Single FETs, MOSFETs datasheet and documents for PMG45UN,115
Single FETs, MOSFETs Overview
The PMG45UN,115 is a dual N-channel enhancement mode MOSFET manufactured by NXP USA Inc. It features a drain-source breakdown voltage of 20V and a continuous drain current of 3A at 25°C. The device is housed in a TSSOP6 (SC-88/SOT-363) surface-mount package. Key electrical characteristics include a maximum on-resistance of 55mΩ at 3A and a gate threshold voltage of 1V at 250µA. This component is designed for low-voltage switching applications requiring compact form factors.
Single FETs, MOSFETs Feature Summary
- Dual N-channel configuration within a single compact surface-mount package
- Low on-resistance optimized for efficient power switching
- Compatible with standard logic-level gate drive voltages
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Load switching circuits
- Battery protection modules
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and tape-and-reel quantity requirements against the official NXP datasheet before ordering. Confirm that the supplier provides traceability documentation for this discontinued series. Ensure storage conditions comply with moisture sensitivity level specifications to prevent package damage during assembly.
Single FETs, MOSFETs Selection Notes
Select this component when a dual N-channel solution is required in a minimal footprint. Compare the 55mΩ on-resistance against alternative packages if higher current capacity is needed. Verify that the 20V rating exceeds the maximum circuit voltage including transients. Check gate charge parameters for high-frequency switching efficiency requirements.
Single FETs, MOSFETs Part Context
This part belongs to NXP's PMG series of small-signal MOSFETs designed for portable electronics. The series emphasizes space-saving packaging and low power consumption. The PMG45UN specifically targets applications where board real estate is limited but dual switching functionality is necessary.
Single FETs, MOSFETs Replacement Considerations
Public sources indicate the PMG45UN,115 is obsolete. Verify compatible substitutes such as the PMG45UN from other manufacturers or equivalent pin-compatible devices. Ensure substitute parts match the 20V/3A ratings and TSSOP6 package dimensions.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
