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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.725A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：725mA, 500mA
- Rds On (Max) @ Id, Vgs：380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：83pF @ 10V
- Power - Max：280mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：Automotive
- Qualification：AEC-Q100
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Overview
The PMGD290UCEAX is a complementary N/P-channel enhancement mode Field-Effect Transistor in a SOT363 package. It utilizes Trench MOSFET technology for fast switching. The N-channel device supports a drain-source voltage of 20 V and continuous current up to 725 mA, with an on-resistance of 290 mΩ at 4.5 V gate drive. The P-channel counterpart handles -20 V and -500 mA, featuring an on-resistance of 670 mΩ under similar conditions. Both channels offer 2 kV ESD protection and are AEC-Q101 qualified.
Feature Summary
- Complementary N/P-channel configuration in a compact SOT363 surface-mounted package
- Trench MOSFET technology enabling very fast switching performance
- Integrated electrostatic discharge protection rated at 2 kV HBM
- Qualified for automotive applications according to AEC-Q101 standards
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side loadswitch implementations
- General switching circuits
- Automotive electronic systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and reel specifications. Confirm that the component meets the required AEC-Q101 qualification status if intended for automotive use. Cross-reference the pinout diagram with your PCB footprint design to prevent installation errors during assembly.
Selection Notes
Select this component when space constraints require a dual-transistor solution in a small SMD package. The low on-resistance values support efficient power handling for low-voltage applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics and thermal management within the defined operating temperature range.
Part Context
This device belongs to Nexperia's portfolio of small-signal MOSFETs designed for high-density circuit board layouts. The SOT363 package allows for reduced component count by integrating both N-channel and P-channel devices into a single unit. This integration simplifies bill of materials and assembly processes for complementary switching requirements.
Replacement Considerations
Direct substitutes include other complementary N/P-channel MOSFETs in the SOT363 package with matching voltage and current ratings. Verify pin compatibility and electrical parameters such as RDS(on) and threshold voltage before substitution to maintain circuit performance integrity.
