SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
PMN20ENAX is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 40V 6.2A 6TSOP. Review the specifications below when checking this part for your BOM.
The PMN20ENAX is a single N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia. It utilizes Trench MOSFET technology and is housed in an SOT457 (SC-74) surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a continuous drain current of 6.7 A, and a maximum on-resistance of 20 mOhms. The device operates within a temperature range of -55 °C to +150 °C junction temperature.
Verify the specific ordering suffix against official Nexperia documentation to ensure correct packaging configuration. Confirm RoHS compliance status and lead times through authorized distributors. Cross-reference the manufacturer part number with ECAD models for accurate footprint integration during the design phase.
Select this component for applications requiring low on-resistance and high current handling in compact form factors. The logic-level compatibility simplifies gate drive circuitry design. Ensure the operating voltage remains within the 30 V limit and consider thermal management for sustained high-current loads.
This part belongs to the PMN series of N-channel Trench MOSFETs from Nexperia. These devices are designed for general-purpose switching applications where small size and low power loss are critical. The SC-74 package provides a balance between thermal performance and board space efficiency.
Direct substitutes may include other Nexperia parts within the PMN series with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.