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PMN34LN,135 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 20V 5.7A 6TSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMN34LN,135
- Description：MOSFET N-CH 20V 5.7A 6TSOP
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：34mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：13.1 nC @ 10 V
- Vgs (Max)：±15V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：1.75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-74
- Package / Case：SC-74, SOT-457
Single FETs, MOSFETs datasheet and documents for PMN34LN,135
Single FETs, MOSFETs Overview
The PMN34LN,135 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 30 V and a continuous drain current of 5.4 A. The device utilizes a TSOP surface-mount package with six pins. Key electrical parameters include a maximum on-state resistance of 38 mΩ and a gate threshold voltage range of 1 V to 2 V. It operates within a temperature range of -55 °C to +150 °C, with a maximum power dissipation of 1.75 W.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchMOS technology for high efficiency and low switching losses
- Designed for logic level gate drive sources
- Suitable for industrial and communications applications
Single FETs, MOSFETs Applications
- DC-to-DC converters
- Motor control
- Server power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix '135' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the PMN34LN series datasheet for accurate pinout and thermal characteristics. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 30 V N-channel MOSFET with moderate current handling capabilities. The TSOP package offers a compact footprint suitable for space-constrained PCB layouts. Consider the 38 mΩ on-resistance for efficiency requirements in power conversion circuits. Verify that the logic-level gate drive compatibility aligns with the system's control voltage levels.
Single FETs, MOSFETs Part Context
This component belongs to the PMN series of N-channel enhancement mode MOSFETs from Nexperia. These devices are engineered using TrenchMOS technology to provide low on-state resistance and fast switching speeds. The series is widely used in various power management and signal switching applications across consumer, industrial, and automotive sectors.
Single FETs, MOSFETs Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Generic equivalents may not match the specific TSOP package dimensions or electrical tolerances. Ensure any substitute maintains the same voltage, current, and thermal ratings.
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