SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PMP4201G is a dual NPN matched transistor in a SOT353 (TSSOP5) package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The DC current gain ranges from 200 to 450 at 2 mA. Current gain matching is specified between 0.98 and 1, with base-emitter voltage matching within 2 mV. Total power dissipation is 300 mW, and the junction temperature reaches 150 °C.
Verify the specific ordering suffix against the manufacturer's official database to confirm availability status and packaging details. Confirm that the component meets all required environmental compliance standards for the target application before finalizing procurement orders.
Select this component when precise matching between two NPN transistors is required in a small footprint. Ensure the design accounts for the 300 mW total power dissipation limit and verify that the 45 V collector-emitter voltage rating exceeds the maximum circuit operating voltage under all conditions.
This device belongs to Nexperia's portfolio of matched double transistors designed for analog signal processing. It serves as an alternative to discrete matched pairs, reducing board space and assembly complexity while maintaining high performance characteristics suitable for sensitive electronic designs.
The PMP4201V is listed as a direct complement within the same product family. Verify pinout compatibility and electrical specifications before substituting other dual NPN transistors in existing designs.
The base-emitter voltage matching is specified as a maximum difference of 2 mV when measured at VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Yes, the PMP4201G has been qualified in accordance with the AEC-Q101 standard for stress test qualification of discrete semiconductors.
The transition frequency (fT) typically ranges from 100 MHz to 250 MHz when measured at VCE = 5 V, IC = 10 mA, and f = 100 MHz.