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PMPB12UN,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 20V 7.9A 6DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for PMPB12UN,115
- Description：MOSFET N-CH 20V 7.9A 6DFN
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.9A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：886 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.7W (Ta), 12.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-DFN2020MD (2x2)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for PMPB12UN,115
Single FETs, MOSFETs Overview
The PMPB12UN,115 is a single N-channel Trench MOSFET manufactured by NXP Semiconductors. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 7.9 A at room temperature. The device exhibits a low on-resistance (Rds(on)) of 0.018 ohms. It is housed in a compact SOT909-1 package, also known as HVSON8 or DFN2020MD-6, which supports standard product orientation on reels.
Single FETs, MOSFETs Feature Summary
- Utilizes Trench MOSFET technology for enhanced performance
- Designed for high-efficiency power switching applications
- Compact surface-mount packaging for space-constrained designs
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Power management modules
- Battery protection systems
Single FETs, MOSFETs Procurement Notes
Verify the obsolete status of this specific part number before procurement planning. Confirm availability of authorized substitutes such as the PMPB15XN series if production continuity is required. Ensure that any replacement component matches the original electrical specifications and physical footprint to maintain circuit integrity and compliance with design standards.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage, high-current switching requirements where minimal conduction loss is critical. The 20 V rating suits battery-powered applications. Consider the thermal characteristics of the HVSON8 package for heat dissipation needs. Evaluate the gate threshold voltage compatibility with the driving logic levels in the target system design.
Single FETs, MOSFETs Part Context
This component belongs to NXP's portfolio of single N-channel MOSFETs designed for portable electronics and power management. The PMPB12UN variant specifically targets applications requiring efficient power handling in small form factors. It represents a segment of silicon metal-oxide semiconductor field-effect transistors optimized for modern consumer devices.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers include the PMPB15XN,115. Verify that the substitute meets all electrical and mechanical requirements of the original design specification.
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