PMPB17EPX

Single FETs, MOSFETs Overview

The PMPB17EP is a P-channel enhancement mode Field-Effect Transistor manufactured by Nexperia USA Inc. It utilizes Trench MOSFET technology and is housed in a leadless DFN2020M-6 (SOT1220-2) plastic package measuring 2 x 2 x 0.65 mm. The device features an exposed drain pad for thermal conduction. Key electrical parameters include a drain-source voltage of -30 V, a continuous drain current of -11 A at 25 °C, and a maximum gate-source voltage of ±20 V. At 25 °C with VGS = -10 V and ID = -5.8 A, the typical on-state resistance is 17.5 mΩ. The junction temperature range spans from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible operation
• Trench MOSFET technology implementation
• Leadless ultra-thin SMD plastic package design
• Exposed drain pad for thermal management

Single FETs, MOSFETs Applications

• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component status remains active before finalizing procurement plans. Cross-reference the requested quantity with authorized distributor availability to align with production schedules. Ensure compliance with RoHS3 specifications as indicated in standard product data sheets.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance. The logic-level compatibility allows direct drive from standard logic outputs. Consider the thermal characteristics and PCB footprint requirements due to the small DFN2020M-6 package size. Evaluate the gate charge and capacitance values for high-speed switching applications to optimize driver performance.

Single FETs, MOSFETs Part Context

This part belongs to the PMPB series of P-channel Trench MOSFETs from Nexperia. These components are designed for medium-power surface-mount applications where space constraints are critical. The series leverages advanced trench technology to achieve low RDS(on) within a minimal footprint, making it suitable for modern portable electronics and power management systems.

Single FETs, MOSFETs Replacement Considerations

Consult the official Nexperia datasheet for verified substitute part numbers. Ensure any replacement matches the DFN2020M-6 package dimensions and pinout configuration. Verify that the alternative device meets or exceeds the -30 V drain-source voltage rating and required current handling capabilities.