PMPB23XNEZ

Single FETs, MOSFETs Overview

The Nexperia PMPB23XNEZ is a single N-channel enhancement mode Trench MOSFET housed in a leadless DFN2020MD-6 (SOT1220) plastic package. It features a drain-source voltage of 20 V and a continuous drain current of 7 A at 25 °C, with a peak pulsed current capability of 10.1 A. The device exhibits a maximum on-state resistance of 22 mΩ at VGS = 4.5 V and ID = 7 A. Key electrical parameters include a gate-source threshold voltage ranging from 0.4 V to 0.9 V and a total gate charge of up to 17 nC. Thermal performance includes a junction-to-ambient thermal resistance of 270 K/W in free air.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench MOSFET technology for enhanced power density within an ultra-thin, leadless surface-mount package.
• Features an exposed drain pad designed to provide excellent thermal conduction capabilities.
• Incorporates tin-plated side pads that are 100% solderable to facilitate optical solder inspection.
• Provides robust electrostatic discharge protection rated at 2.1 kV under Human Body Model conditions.

Single FETs, MOSFETs Applications

• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking codes. Confirm that the component meets RoHS3 compliance requirements as specified in the product data sheet. Ensure design-in compatibility with standard reflow soldering profiles for the DFN2020MD-6 package footprint.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and high current handling in compact form factors. The 20 V rating suits low-voltage power distribution systems. Evaluate thermal management strategies based on the specified junction-to-ambient resistance values when designing PCB layouts for sustained operation.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia PMPB series of small signal and logic level MOSFETs. It is manufactured using silicon Trench technology, which offers improved switching characteristics compared to planar structures. The DFN2020MD-6 package is part of Nexperia's portfolio of thermally enhanced ultra-thin small outline packages designed for space-constrained electronics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 20 V N-channel specification, DFN2020MD-6 package, and similar RDS(on) and current ratings. Verify pinout compatibility and thermal resistance characteristics before substitution.