Single FETs, MOSFETs PMV164ENER product image

PMV164ENER

$0.30
  • Description:PMV164ENE/SOT23/TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:bbee9983c6e4 Category: Brand:

  
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PMV164ENER is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is PMV164ENE/SOT23/TO-236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for PMV164ENER

  • Description:PMV164ENE/SOT23/TO-236AB
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:218mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id:2.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3.8 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):640mW (Ta), 5.8W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-236AB
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for PMV164ENER

PMV164ENER

Single FETs, MOSFETs Overview

The PMV164ENER is an N-channel enhancement mode Field-Effect Transistor manufactured by Nexperia, utilizing Trench MOSFET technology within a SOT23 (TO-236AB) surface-mounted plastic package. It features a drain-source voltage rating of 60 V and a continuous drain current of 1.6 A at 25 °C. The device exhibits a typical on-state resistance of 164 mΩ at VGS = 10 V and ID = 1.6 A. It supports an extended junction temperature range up to 175 °C and includes ElectroStatic Discharge protection exceeding 2 kV HBM.

Single FETs, MOSFETs Feature Summary

  • Logic-level compatible operation
  • Extended temperature range capability up to 175 °C
  • Trench MOSFET technology for optimized performance
  • Electrostatic Discharge protection greater than 2 kV HBM

Single FETs, MOSFETs Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'EAR' against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component matches the exact part number PMV164ENER rather than the base PMV164ENE. Confirm RoHS compliance status through the manufacturer's latest product data sheet before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-speed switching with logic-level gate drive compatibility. The low on-state resistance and fast switching characteristics make it suitable for efficient power management in compact designs. Consider the thermal resistance values when designing heat dissipation strategies for the SOT23 package under varying ambient conditions.

Single FETs, MOSFETs Part Context

This component belongs to the Nexperia PMV series of small-signal N-channel MOSFETs designed for general-purpose switching applications. The series utilizes advanced Trench technology to achieve low on-resistance and fast switching speeds within a minimal footprint. These devices are widely used in portable electronics and industrial control systems where space efficiency and reliability are critical.

Single FETs, MOSFETs Replacement Considerations

PMV164ENEA

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the PMV164ENER?

The maximum operating junction temperature is 175 °C.

Does the PMV164ENER include ESD protection?

Yes, the device provides Electrostatic Discharge protection greater than 2 kV HBM (Human Body Model).

PMV164ENERPMV164ENER
$0.30
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