PMV65XPEA215

Single FETs, MOSFETs Overview

The PMV65XPEA is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device plastic package. The device features a drain-source voltage of -20 V and a gate-source voltage range of -12 V to 12 V. At a junction temperature of 25 °C, the continuous drain current is rated at -2.8 A, with a peak pulse current capability of -12 A. The typical on-state resistance is 67 mΩ at VGS = -4.5 V and ID = -2.8 A. Total power dissipation reaches 890 mW, supported by an electrostatic discharge protection rating of 2 kV HBM.

Single FETs, MOSFETs Feature Summary

• Trench MOSFET technology enables very fast switching speeds.
• Enhanced power dissipation capability for efficient thermal management.
• Integrated ElectroStatic Discharge (ESD) protection rated at 2 kV HBM.
• Qualified according to the AEC-Q101 automotive standard.

Single FETs, MOSFETs Applications

• Relay driver
• High speed line driver
• High-side loadswitch
• Switching circuits

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the specific reel or cut tape configuration required for your assembly process. Confirm the component status against the latest Nexperia product data sheet to ensure availability and compliance with current manufacturing specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution with low on-resistance is required for high-speed switching applications. Ensure the design accommodates the -20 V drain-source voltage limit and verify that the PCB layout supports the necessary thermal dissipation for the specified power ratings under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the PMV65XP series of P-channel Trench MOSFETs manufactured by Nexperia. These devices are designed for general-purpose switching applications requiring small form factors. The series utilizes advanced trench technology to achieve improved performance characteristics compared to standard planar MOSFETs within the same package footprint.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other PMV65XP variants from Nexperia, such as PMV65XP,215, provided they share identical electrical parameters and pin configurations. Verify package compatibility and thermal characteristics when considering alternative manufacturers' equivalents.

Single FETs, MOSFETs FAQ

Is the PMV65XPEA suitable for automotive applications?

Yes, the device has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101, making it suitable for use in automotive applications.

What is the maximum peak drain current for single pulses?

The maximum peak drain current (IDM) is -12 A for single pulses with a duration of tp ≤ 10 µs at a junction temperature of 25 °C.