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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 9.9A 8TSSOP
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9.9A
- Rds On (Max) @ Id, Vgs：19mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：23.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1366pF @ 16V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
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Overview
The PMWD16UN is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing TrenchMOS technology. It features an ultra-low threshold voltage and fast switching capabilities within a plastic surface-mount package. The device supports a drain-source voltage of 20 V and continuous drain currents up to 9.9 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 19 mΩ at VGS = 4.5 V and a total power dissipation of 3.1 W. The component is housed in an 8-lead TSSOP package (SOT530-1).
Feature Summary
- Dual N-channel configuration using μTrenchMOS technology for low profile and surface mounting.
- Ultra-low threshold voltage enabling efficient control with low gate drive signals.
- Fast switching characteristics suitable for high-frequency applications.
Applications
- Portable appliances
- PCMCIA cards
- Battery management systems
- Load switching
Procurement Notes
Verify the specific ordering information against the manufacturer's current documentation before procurement. Confirm that the SOT530-1 package version matches design requirements. Ensure thermal management strategies align with the specified junction-to-solder point thermal resistance limits provided in the datasheet.
Selection Notes
Select this component when a compact dual FET solution with low RDS(on) is required for portable or battery-powered designs. Evaluate the 20 V breakdown voltage and 9.9 A current rating against peak load demands. Consider the TSSOP8 footprint constraints and verify compatibility with automated assembly processes for thin shrink small outline packages.
Part Context
This component belongs to the family of dual N-channel enhancement mode field-effect transistors manufactured by Philips Semiconductors, now part of NXP USA Inc. It utilizes proprietary TrenchMOS technology to achieve low on-resistance and fast switching speeds within a compact plastic package designed for surface mounting applications.
Replacement Considerations
Consult official replacement lists for verified substitutes. Cross-reference pinout configurations and electrical ratings carefully to ensure functional equivalence without redesigning the printed circuit board layout.
FAQ
What is the maximum continuous drain current for the PMWD16UN?
The maximum continuous drain current is 9.9 A at a solder point temperature of 25 °C and a gate-source voltage of 4.5 V.
What package type does the PMWD16UN use?
The PMWD16UN uses a TSSOP8 plastic thin shrink small outline package, identified as SOT530-1, featuring 8 leads with a body width of 4.4 mm.
What is the typical gate-source threshold voltage?
The typical gate-source threshold voltage is 0.7 V, measured with a drain current of 1 mA and VDS equal to VGS.
